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International Journal of Advanced Computer Research (IJACR)

ISSN (Print):2249-7277    ISSN (Online):2277-7970
Volume-4 Issue-16 September-2014
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Paper Title : Performance Analysis of Silicon and Germanium Nanowire Transistor using Crystal Orientation and Oxide Thickness
Author Name : P.Theres Mary, N.B.Balamurugan
Abstract :

Nanowire Transistors have attracted attention due to the probable high performance and excellent controllability of device current. In this paper, we investigate the performance analysis of nanowire transistors made of silicon and germanium materials. The nanowire transistor has a 3D distribution of electron density and electrostatic potential, therefore self-consistent 3D simulations are used. Nanowire (tool) is 3D Poisson self-consistent simulator which can study the 3D transport in nanowire transistor considering phonon scattering based on the effective-mass approximation. The output characteristics of the nanowire transistors are studied in detail for both Si and Ge materials for different transport orientation (i.e., 100,110,111) and varying the oxide thickness.

Keywords : Coupled mode space approach ;Uncoupled mode space approach.
Cite this article : P.Theres Mary, N.B.Balamurugan, " Performance Analysis of Silicon and Germanium Nanowire Transistor using Crystal Orientation and Oxide Thickness " , International Journal of Advanced Computer Research (IJACR), Volume-4, Issue-16, September-2014 ,pp.898-903.